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Coherence times of electron spins bound to phosphorus donors have beenmeasured, using a standard Hahn echo technique, to be up to 20 ms inisotopically pure silicon with [P]$ = 10^{14}$ cm$^{-3}$ and at temperatures$\leq 4 $K. Although such times are exceptionally long for electron spins inthe solid state, they are nevertheless limited by donor electron spin-spininteractions. Suppressing such interactions requires even lower donorconcentrations, which lie below the detection limit for typical electron spinresonance (ESR) spectrometers. Here we describe an alternative method forphosphorus donor ESR detection, exploiting the spin-to-charge conversionprovided by the optical donor bound exciton transition. We characterise themethod and its dependence on laser power and use it to measure a coherence timeof $T_2 = 130 $ms for one of the purest silicon samples grown to-date ([P]$ =5\times 10^{11} $cm$^{-3}$). We then benchmark this result using an alternativeapplication of the donor bound exciton transition: optically polarising thedonor spins before using conventional ESR detection at 1.7~K for a sample with[P]$ = 4\times10^{12} $cm$^{-3}$, and measuring in this case a $T_2$ of 350 ms.

Electron Spin Resonance of P Donors in Isotopically Purified Si Detected by Contactless Photoconductivity