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Combining solid state single photon emitters (SPE) with nanophotonicplatforms is a key goal in integrated quantum photonics. In order to realizefunctionality in potentially scalable elements, suitable SPEs have to bebright, stable, and widely tunable at room temperature. In this work we showthat selected SPEs embedded in a few layer hexagonal boron nitride (hBN) meetthese demands. In order to show the wide tunability of these SPEs we employ anAFM with a conductive tip to apply an electrostatic field to individual hBNemitters sandwiched between the tip and an indium tin oxide coated glass slide.A very large and reversible Stark shift of $(5.5 \pm 3)\,$nm at a zero fieldwavelength of $670\,$nm was induced by applying just $20\,$V, which exceeds thetypical resonance linewidths of nanodielectric and even nanoplasmonicresonators. Our results are important to further understand the physical originof SPEs in hBN as well as for practical quantum photonic applications wherewide spectral tuning and on/off resonance switching are required.

Very Large and Reversible Stark Shift Tuning of Single Emitters in Layered Hexagonal Boron Nitride