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Carrier lifetime measurements reveal that, contrary to common expectations,the high-current non-radiative recombination (droop) in III-Nitride lightemitters is comprised of two contributions which scale with the cube of thecarrier density: an intrinsic recombination --most likely standard Augerscattering-- and an extrinsic recombination which is proportional to thedensity of point defects. This second droop mechanism, which hasn't previouslybeen observed, is likely caused by an impurity-assisted Auger process. Further,it is shown that longer-wavelength emitters suffer from higher point defectrecombinations, in turn causing an increase in the extrinsic droop process. Itis proposed that this effect leads to the green gap, and that point defectreduction is a strategy to both vanquish the green gap and more generallyimprove quantum efficiency at high current.

Quantum efficiency of III-Nitride emitters: evidence for defect-assisted non-radiative recombination and its effect on the green gap