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1T-TaS2 is a layered material that exhibits charge density wave (CDW) induceddistinct electrical resistivity phases and has attracted a lot of attention forinteresting device applications. However, such resistivity switching effectsare often weak, and cannot be modulated by an external gate voltage - limitingtheir widespread usage. Using a back-gated 1T-TaS2/2H-MoS2 heterojunction, herewe show that the usual resistivity switching in TaS2 due to different phasetransitions is accompanied with a surprisingly strong modulation in theSchottky barrier height (SBH) at the TaS2/MoS2 interface - providing anadditional knob to control the degree of the phase-transition-drivenresistivity switching by an external gate voltage. In particular, thecommensurate (C) to triclinic (T) phase transition results in an increase inthe SBH owing to a collapse of the Mott gap in TaS2. The change in SBH allowsus to estimate an electrical Mott gap opening of ~71 +/- 7 meV in the C phaseof TaS2. On the other hand, the nearly-commensurate (NC) to incommensurate (IC)phase transition results in a suppression in the SBH, and the heterojunctionshows a gate-controlled resistivity switching up to 17.3, which is ~14.5 timeshigher than that of standalone TaS2. The findings mark an important stepforward showing a promising pathway to externally control as well as amplifythe CDW induced resistivity switching. This will boost device applications thatexploit these phase transitions, such as ultra-broadband photodetection,negative differential conductance, fast oscillator and threshold switching inneuromorphic circuits.

Gate controlled large resistance switching driven by charge density wave in 1T-TaS2/2H-MoS2 heterojunction