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Defects in crystals are leading candidates for photon-based quantumtechnologies, but progress in developing practical devices critically dependson improving defect optical and spin properties. Motivated by this need, westudy a new defect qubit candidate, the shallow donor in ZnO. We demonstrateall-optical control of the electron spin state of the donor qubits and measurethe spin coherence properties. We find a longitudinal relaxation time T$_1$exceeding 100 ms, an inhomogeneous dephasing time T$_2^*$ of $17\pm2$ ns, and aHahn spin-echo time T$_2$ of $50\pm13$ $\mu$s. The magnitude of T$_2^*$ isconsistent with the inhomogeneity of the nuclear hyperfine field in naturalZnO. Possible mechanisms limiting T$_2$ include instantaneous diffusion andnuclear spin diffusion (spectral diffusion). These results are comparable tothe phosphorous donor system in natural silicon, suggesting that with isotopeand chemical purification long qubit coherence times can be obtained for donorspins in a direct band gap semiconductor. This work motivates further researchon high-purity material growth, quantum device fabrication, and high-fidelitycontrol of the donor:ZnO system for quantum technologies.

Coherence properties of shallow donor qubits in ZnO