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Ge with a quasi-direct band gap can be realized by strain engineering,alloying with Sn, or ultrahigh n-type doping. In this work, we use all threeapproaches together to fabricate direct-band-gap Ge-Sn alloys. The heavilydoped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium materialprocessing. P is used to form highly doped n-type Ge-Sn layers and to modifythe lattice parameter of P-doped Ge-Sn alloys. The strain engineering inheavily-P-doped Ge-Sn films is confirmed by x-ray diffraction and micro Ramanspectroscopy. The change of the band gap in P-doped Ge-Sn alloy as a functionof P concentration is theoretically predicted by density functional theory andexperimentally verified by near-infrared spectroscopic ellipsometry. Accordingto the shift of the absorption edge, it is shown that for an electronconcentration greater than 1x10^20 cm-3 the band-gap renormalization ispartially compensated by the Burstein-Moss effect. These results indicate thatGe-based materials have high potential for use in near-infrared optoelectronicdevices, fully compatible with CMOS technology.

Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping