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Electrical control of spin transport is promising for achieving new devicefunctionalities. Here we calculate the propagation of spin currents in agraphene-based spin-current demultiplexer under the effect of drift currents.We show that, using spin- and charge-transport parameters already obtained inexperiments, the spin currents can be guided in a controlled way. Inparticular, spin-current selectivities up to 102 can be achieved formeasurements over a distance of 10{\mu}m under a moderate drift current densityof 20{\mu}A/{\mu}m, meaning that the spin current in the arm that is off isonly 1% of the current in the arm that is on. To illustrate the versatility ofthis approach, we show similar efficiencies in a device with four outputs andthe possibility of multiplexer operation using spin drift. Finally, we explainhow the effect can be optimized in graphene and two-dimensional semiconductors.

Carrier Drift Control of Spin Currents in Graphene-Based Spin-Current Demultiplexers