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We perform a systematic theoretical analysis of the nature and importance ofalloy disorder effects on the electronic and optical properties ofGaN$_{y}$As$_{1-x-y}$Bi$_{x}$ alloys and quantum wells (QWs), using large-scaleatomistic supercell electronic structure calculations based on thetight-binding method. Using ordered alloy supercell calculations we also deriveand parametrise an extended basis 14-band \textbf{k}$\cdot$\textbf{p}Hamiltonian for GaN$_{y}$As$_{1-x-y}$Bi$_{x}$. Comparison of the results ofthese models highlights the role played by short-range alloy disorder --associated with substitutional nitrogen (N) and bismuth (Bi) incorporation --in determining the details of the electronic and optical properties. Systematicanalysis of large alloy supercells reveals that the respective impact of N andBi on the band structure remain largely independent, a robust conclusion wefind to be valid even in the presence of significant alloy disorder where N andBi atoms share common Ga nearest neighbours. Our calculations reveal that N-(Bi-) related alloy disorder strongly influences the conduction (valence) bandedge states, leading in QWs to strong carrier localisation, as well asinhomogeneous broadening and modification of the conventional selection rulesfor optical transitions. Our analysis provides detailed insight into keyproperties and trends in this unusual material system, and enables quantitativeevaluation of the potential of GaN$_{y}$As$_{1-x-y}$Bi$_{x}$ alloys forapplications in photonic and photovoltaic devices.

Impact of disorder on the optoelectronic properties of GaN$_y$As$_{1-x-y}$Bi$_x$ alloys and heterostructures