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We discuss a concept of a point-like source of the extreme ultraviolet (EUV)light based on a non-equilibrium microwave discharge in expanding jet of densexenon plasma with multiply charged ions. A conversion efficiency of microwaveradiation to EUV light is calculated, and physical constraints, andopportunities for future devices are considered. Special attention is given totrapping of spontaneous line emission inside a radiating plasma spot thatsignificantly influences the efficiency of EUV light source.

Extreme-ultraviolet light source for lithography based on an expanding jet of dense xenon plasma supported by microwaves