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The processes of hole localization in the Y3Al5O12 and Lu3Al5O12 singlecrystals were investigated by electron paramagnetic resonance (EPR) andthermally stimulated luminescence (TSL). It was found that holes created byx-ray irradiation at 77 K are predominantly self-trapped at regular oxygen ionsforming O- hole center. This self-trapped hole (STH) center is thermally stableto about 100 K in both YAG and LuAG crystals. At higher temperatures, thermallyliberated holes are retrapped at oxygen ions in the vicinity of an acceptor ionsuch as Mg2+ and Al_{Y} or Al_{Lu} antisite ion that leads to increase of thethermal stability of the trapped hole to app. 150 K. TSL measurements show twocomposite glow peaks in the temperature range of 77 - 280 K, the temperaturepositions of which well correlate with the thermal stability of the O- centers.The hole thermal ionization energy was determined from a numerical fit of theTSL peaks within the model of second order kinetics. It is in the range of 0.25- 0.26 eV for the O- STH center, and increases to 0.41 - 0.45 eV for O- centerstabilized by the acceptor. Revealed O- centers can be attributed to O- smallpolarons formed mainly due to the hole stabilization by short-range interactionwith the surrounding lattice.

Hole self-trapping in the Y3Al5O12 and Lu3Al5O12 garnet crystals