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In this work we present a detailed analysis of the interplay of Coulombeffects and different mechanisms that can lead to carrier localization effectsin c-plane InGaN/GaN quantum wells. As mechanisms for carrier localization weconsider here effects introduced by random alloy fluctuations as well asstructural inhomogeneities such as well width fluctuations. Special attentionis paid to the impact of the well width on the results. All calculations havebeen carried out in the framework of atomistic tight-binding theory. Ourtheoretical investigations show that independent of the here studied wellwidths, carrier localization effects due to built-in fields, well widthfluctuations and random alloy fluctuations dominate over Coulomb effects interms of charge density redistributions. However, the situation is less clearcut when the well width fluctuations are absent. For large well width (approx.> 2.5 nm) charge density redistributions are possible but the electronic andoptical properties are basically dominated by the spatial out-of plane carrierseparation originating from the electrostatic built-in field. The situationchanges for lower well width (< 2.5 nm) where the Coulomb effect can lead tosignificant charge density redistributions and thus might compensate a largefraction of the spatial in-plane wave function separation observed in asingle-particle picture. Given that this in-plane separation has been regardedas one of the main drivers behind the green gap problem, our calculationsindicate that radiative recombination rates might significantly benefit from areduced quantum well barrier interface roughness.

physical review applied

Interface roughness, carrier localization and wave function overlap in  $c$-plane InGaN/GaN quantum wells: Interplay of well width, alloy  microstructure, structural inhomogeneities and Coulomb effects