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Antiferromagnetic (AFM) spintronics, where magneto-transport is governed byan antiferromagnet instead of a ferromagnet, opens fascinating new perspectivesfor both fundamental research and device technology, owing to their intrinsicappealing properties like rigidness to magnetic field, absence of stray field,and ultrafast spin dynamics. One of the urgent challenges, hindering therealization of the full potential of AFM spintronics, has been the performancegap between AFM metals and insulators. Here, we demonstrate the insulator-metaltransition and persistently large anisotropic magnetoresistance (AMR) in singlecrystals Sr2(Ir1-xGax)O4 (0<x<0.09) which host the same basal-plane AFM latticewith strong spin-orbit coupling. The non-doped Sr2IrO4 shows the insulatingtransport with the AMR as big as ~16.8% at 50 K. The Ga substitution of Irallows a gradual reduction of electrical resistivity, and a clearinsulator-to-metal transition is identified in doped samples with x above 0.05,while the AMR can still have ~1%, sizable in comparison with those in AFMmetals reported so far. Our experiments reveal that all the samples have thesimilar fourfold AMR symmetry, which can be well understood in the scenario ofmagnetocrystalline anisotropy. It is suggested that the spin-orbit coupledantiferromagnets Sr2(Ir1-xGax)O4 are promising candidate materials for AFMspintronics, providing a rare opportunity to integrate the superior spintronicfunctionalities of AFM metals and insulators.

Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4