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Breakdowns may occur in high-voltage applications even in ultrahigh vacuumconditions. Previously, we showed that it is important to pay attention to thepost-breakdown voltage recovery in order to limit the appearance of secondarybreakdowns associated with the primary ones. This can improve the overallefficiency of the high-voltage device. In this study, we focus on theoptimization of the linear post-breakdown voltage recovery, with the principleaim of alleviating the problem of the secondary breakdowns. We investigatevoltage recovery scenarios with different starting voltages and slopes oflinear voltage increase by using a pulsed dc system. We find that a highernumber of pulses during the voltage recovery produces fewer secondary BDs and alower overall breakdown rate. Lowering the number of pulses led to moredramatic voltage recovery resulting in higher breakdown rates. A steepervoltage increase rate lead to a more localized occurrence of the secondarybreakdowns near the end of the voltage recovery period. It was also found thatthe peak BD probability is regularly observed around 1 s after the end of theramping period and that its value decreases exponentially with the amount ofenergy put into the system during the ramping. The value also decaysexponentially with a half-life of (1.4$\pm$0.3) ms if the voltage onlyincreased between the voltage recovery steps.

Linear voltage recovery after a breakdown in a pulsed dc system