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Cryogenic bypass diodes are part of the baseline powering layout for the circuits of the new ${\mathrm{Nb}}_{3}\mathrm{Sn}$ based final focus magnets of the high luminosity Large Hadron Collider. They will protect the magnets against excessive transient voltages during a nonuniform quenching process. The diodes are located inside an extension to the magnet cryostat, operated in superfluid helium and exposed to ionizing radiation. Therefore, the radiation tolerance of different types of diodes has been tested at cryogenic temperatures in CERN's CHARM irradiation test facility during its 2018 run. The forward bias characteristics, the turn-on voltage and the reverse blocking voltage of each diode were measured weekly at 4.2 K and 77 K, as a function of the accumulated radiation dose. The diodes were submitted to a total dose close to 12 kGy and a 1 MeV neutron equivalent fluence of $2.2\ifmmode\times\else\texttimes\fi{}{10}^{14}\text{ }\text{ }{\mathrm{cm}}^{\ensuremath{-}2}$. After the end of the irradiation program the annealing behavior of the diodes was tested by increasing the temperature slowly to 293 K. This paper describes the experimental setup, the measurement procedure and the analysis of the measurements performed during the irradiation program as well as the results of the annealing study.

Characterization of the radiation tolerance of cryogenic diodes for the High Luminosity LHC inner triplet circuit