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Using a high energy electron beam for the imaging of high density matter withboth high spatial-temporal and areal density resolution under extreme states oftemperature and pressure is one of the critical challenges in high energydensity physics . When a charged particle beam passes through an opaque target,the beam will be scattered with a distribution that depends on the thickness ofthe material. By collecting the scattered beam either near or off axis,so-called bright field or dark field images can be obtained. Here we report onan electron radiography experiment using 45 MeV electrons from an S-bandphoto-injector, where scattered electrons, after interacting with a sample, arecollected and imaged by a quadrupole imaging system. We achieved a fewmicrometers (about 4 micrometers) spatial resolution and about 10 micrometersthickness resolution for a silicon target of 300-600 micron thickness. Withaddition of dark field images that are captured by selecting electrons withlarge scattering angle, we show that more useful information in determiningexternal details such as outlines, boundaries and defects can be obtained.

Experiments on bright field and dark field high energy electron imaging with thick target material