English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Open

Presents the pdf analysis as premium feature

PDF Analysis

Insights

Presents the summarisation as premium feature

Summarisation

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

We calculated the yield of outgoing hydrogen negative ions after the reflection of 1-keV neutral hydrogen atoms from a $(2\ifmmode\times\else\texttimes\fi{}1)$-reconstructed Si(100) surface. We find that the charge-transfer dynamics at the reconstructed surface is dependent on both the surface-electronic structure and orientation of the projectile trajectory relative to the crystal azimuthal directions. Our results are in good quantitative agreement with the measured $\mathrm{H}{}^{\ensuremath{-}}$ fractions of Maazouz and Esaulov [Surf. Sci. 398, 49 (1998)] for scattering trajectories that are aligned perpendicularly to rows of silicon dimers.

physical review a

Hydrogen-anion formation near a (2<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mo>×</mml:mo></mml:mrow></mml:math>1)-reconstructed Si(100) surface: Substrate-electronic-structure and trajectory dependence

Hydrogen-anion formation near a (2×1)-reconstructed Si(100) surface: Substrate-electronic-structure and trajectory dependence