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The electron-ion recombination rate coefficient for Si IV forming Si III wasmeasured at the heavy-ion storage-ring TSR. The experimental electron-ioncollision energy range of 0-186 eV encompassed the 2p(6) nl n'l' dielectronicrecombination (DR) resonances associated with 3s to nl core excitations, 2s2p(6) 3s nl n'l' resonances associated with 2s to nl (n=3,4) core excitations,and 2p(5) 3s nl n'l' resonances associated with 2p to nl (n=3,...,infinity)core excitations. The experimental DR results are compared with theoreticalcalculations using the multiconfiguration Dirac-Fock (MCDF) method for DR viathe 3s to 3p n'l' and 3s to 3d n'l' (both n'=3,...,6) and 2p(5) 3s 3l n'l'(n'=3,4) capture channels. Finally, the experimental and theoretical plasma DRrate coefficients for Si IV forming Si III are derived and compared withpreviously available results.

Electron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculations