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We propose two novel experiments on the measurement of the Casimir forceacting between a gold coated sphere and semiconductor plates with markedlydifferent charge carrier densities. In the first of these experiments apatterned Si plate is used which consists of two sections of different dopantdensities and oscillates in the horizontal direction below a sphere. Themeasurement scheme in this experiment is differential, i.e., allows the directhigh-precision measurement of the difference of the Casimir forces between thesphere and sections of the patterned plate or the difference of the equivalentpressures between Au and patterned parallel plates with static and dynamictechniques, respectively. The second experiment proposes to measure the Casimirforce between the same sphere and a VO${}_2$ film which undergoes theinsulator-metal phase transition with the increase of temperature. We reportthe present status of the interferometer based variable temperature apparatusdeveloped to perform both experiments and present the first results on thecalibration and sensitivity. The magnitudes of the Casimir forces and pressuresin the experimental configurations are calculated using different theoreticalapproaches to the description of optical and conductivity properties ofsemiconductors at low frequencies proposed in the literature. It is shown thatthe suggested experiments will aid in the resolution of theoretical problemsarising in the application of the Lifshitz theory at nonzero temperature toreal materials. They will also open new opportunities in nanotechnology.

Experimental approaches to the difference in the Casimir force through the varying optical properties of boundary surface