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Kerr frequency comb generation relies on dedicated waveguide platforms thatare optimized towards ultralow loss while offering comparatively limitedfunctionality restricted to passive building blocks. In contrast to that, thesilicon-photonic platform offers a highly developed portfolio ofhigh-performance devices, but is deemed to be inherently unsuited for Kerr combgeneration at near-infrared (NIR) telecommunication wavelengths due to strongtwo-photon absorption (TPA) and subsequent free-carrier absorption (FCA). Herewe present a theoretical investigation that quantifies the impact of TPA andFCA on Kerr comb formation and that is based on a modified version of theLugiato-Lefever equation (LLE). We find that silicon microresonators may beused for Kerr comb generation in the NIR, provided that the dwell time of theTPA-generated free-carriers in the waveguide core is reduced by areverse-biased p-i-njunction and that the pump parameters are chosenappropriately. We validate our analytical predictions with time integrations ofthe LLE, and we present a specific design of a silicon microresonator that mayeven support formation of dissipative Kerr soliton combs.

Analysis of Kerr comb generation in silicon microresonators under the influence of two-photon absorption and free-carrier absorption