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We discuss the successes of the dynamical mean field (DMF) approach to metalinsulator transitions in both the clean and the disordered limit. In the lattercase, standard DMF equations are generalized in order to incorporate both thephysics of strong correlation and Anderson localization effects. The resultsgive new insights into the puzzling features of doped semiconductors.Comment: 18 pages; Contribution to the Royal Society Discussion Meeting on  "The Metal-Non Metal Transition in Macroscopic and Microscopic Systems",  March 5-6, 199

philosophical transactions - royal society. mathematical, physical and engineering sciences/philosophical transactions - royal society. mathematical, physical and engineering sciences

Dynamical mean–field studies of metal–insulator transitions