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This study investigated the effect of silicon (Si) on the photosynthetic gas exchange parameters (net CO 2  assimilation rate [A], stomatal conductance to water vapor [g s ], internal CO 2  concentration [C i ], and transpiration rate [E]) and chlorophyll fluorescence a parameters (maximum quantum quenching [F v /F m  and F v ′/F m ′], photochemical [q P ] and nonphotochemical [NPQ] quenching coefficients, and electron transport rate [ETR]) in wheat plants grown in a nutrient solution containing 0 mM (–Si) or 2 mM (+Si) Si and noninoculated or inoculated with Pyricularia oryzae. Blast severity decreased due to higher foliar Si concentration. For the inoculated +Si plants, A, g s , and E were significantly higher in contrast to the inoculated –Si plants. For the inoculated +Si plants, significant differences of F v /F m  between the –Si and +Si plants occurred at 48, 96, and 120 h after inoculation (hai) and at 72, 96, and 120 hai for F v ′/F m ′. The F v /F m  and F v ′/F m ′, in addition to total chlorophyll concentration (a + b) and the chlorophyll a/b ratio, significantly decreased in the –Si plants compared with the +Si plants. Significant differences between the –Si and +Si inoculated plants occurred for q P , NPQ, and ETR. The supply of Si contributed to decrease blast severity in addition to improving gas exchange performance and causing less dysfunction at the photochemical level.

Leaf Gas Exchange and Chlorophyll a Fluorescence in Wheat Plants Supplied with Silicon and Infected with Pyricularia oryzae