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Clonal trees of  Pinus radiata  D. Don were grown in open-top chambers at a field site in New Zealand for 3 years at ambient (37 Pa) or elevated (65 Pa) carbon dioxide (CO 2 ) partial pressure. Nitrogen (N) was supplied to half of the trees in each CO 2  treatment, at 15 g N m −2  in the first year and 60 g N m −2  in the subsequent 2 years (high-N treatment). Trees in the low-N treatment were not supplied with N but received the same amount of other nutrients as trees in the high-N treatment. In the first year, stem basal area increased more in trees growing at elevated CO 2  partial pressure and high-N supply than in control trees, suggesting a positive interaction between these resources. However, the relative rate of growth became the same across trees in all treatments after 450 days, resulting in trees growing at elevated CO 2  partial pressure and high-N supply having larger basal areas than trees in the other treatments. Sapwood N content per unit dry mass was consistently about 0.09% in all treatments, indicating that N status was not suppressed by elevated CO 2  partial pressure. Thus, during the first year of growth, an elevated CO 2  partial pressure enhanced carbon (C) and N storage in woody stems, but there was no further stimulus to C and N deposition after the first year. The chemical composition of sapwood was unaffected by elevated CO 2  partial pressure, indicating that no additional C was sequestered through lignification. However, independent of the treatments, early wood was 13% richer in lignin than late wood. Elevated CO 2  partial pressure decreased the proportion of sapwood occupied by the lumina of tracheids by up to 12%, indicating increased sapwood density in response to CO 2  enrichment. This effect was probably a result of thicker tracheid walls rather than narrower lumina.

Sapwood development in Pinus radiata trees grown for three years at ambient and elevated carbon dioxide partial pressures