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The layer Hall effect describes electrons spontaneously deflected to oppositesides at different layers, which has been experimentally reported in theMnBi$_2$Te$_4$ thinfilms under perpendicular electric fields [Gao et al.,Nature 595, 521 (2021)]. Here, we reveal a universal origin of the layer Halleffect in terms of the so-called hidden Berry curvature, as well as materialdesign principles. Hence, it gives rise to zero Berry curvature in momentumspace but nonzero layer-locked hidden Berry curvature in real space. We showthat compared to that of a trivial insulator, the layer Hall effect issignificantly enhanced in antiferromagnetic topological insulators. Ouruniversal picture provides a paradigm for revealing the hidden physics as aresult of the interplay between the global and local symmetries, and can begeneralized in various scenarios.

Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators