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Contact interface properties are important in determining the performances ofdevices based on atomically thin two-dimensional (2D) materials, especiallythose with short channels. Understanding the contact interface is thereforequite important to design better devices. Herein, we use scanning transmissionelectron microscopy, electron energy loss spectroscopy, and first-principlescalculations to reveal the electronic structures within the metallic(1T')-semiconducting (2H) MoTe2 coplanar phase boundary across a wide spectralrange and correlate its properties and atomic structure. We find that the2H-MoTe2 excitonic peaks cross the phase boundary into the 1T' phase within arange of approximately 150 nm. The 1T'-MoTe2 crystal field can penetrate theboundary and extend into the 2H phase by approximately two unit cells. Theplasmonic oscillations exhibit strong angle dependence, i.e., a red-shift(approximately 0.3 eV-1.2 eV) occurs within 4 nm at 1T'/2H-MoTe2 boundarieswith large tilt angles, but there is no shift at zero-tilted boundaries. Theseatomic-scale measurements reveal the structure-property relationships of1T'/2H-MoTe2 boundary, providing useful information for phase boundaryengineering and device development based on 2D materials.

Correlating the Electronic Structures of Metallic/Semiconductor MoTe2 Interface to its Atomic Structures