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The metal-graphene contact resistance is one of the major limiting factorstoward the technological exploitation of graphene in electronic devices andsensors. A high contact resistance can be detrimental to device performance andspoil the intrinsic great properties of graphene. In this paper, we fabricategraphene field-effect transistors with different geometries to study thecontact and channel resistance as well as the carrier mobility as a function ofgate voltage and temperature. We apply the transfer length method and they-function method showing that the two approaches can complement each other toevaluate the contact resistance and prevent artifacts in the estimation of thegate-voltage dependence of the carrier mobility. We find that the gate voltagemodulates the contact and the channel resistance in a similar way but does notchange the carrier mobility. We also show that the raising temperature lowersthe carrier mobility, has negligible effect on the contact resistance, and caninduce a transition from a semiconducting to a metallic behavior of thegraphene sheet resistance, depending on the applied gate voltage. Finally weshow that eliminating the detrimental effects of the contact resistance on thetransistor channel current almost doubles the carrier field-effect mobility andthat a competitive contact resistance an be achieved by the zig-zag shaping ofthe Ni contact.

Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods