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Previous high-resolution angle-resolved photoemission (ARPES) studies ofURu$_2$Si$_2$ have characterized the temperature-dependent behavior ofnarrow-band states close to the Fermi level ($E_\mathrm{F}$) at low photonenergies near the zone center, with an emphasis on electronic reconstructiondue to Brillouin zone folding. A substantial challenge to a proper descriptionis that these states interact with other hole-band states that are generallyabsent from bulk-sensitive soft x-ray ARPES measurements. Here we provide amore global $k$-space context for the presence of such states and theirrelation to the bulk Fermi surface topology using synchrotron-based wide-angleand photon energy-dependent ARPES mapping of the electronic structure usingphoton energies intermediate between the low-energy regime and the high-energysoft x-ray regime. Small-spot spatial dependence, $f$-resonant photoemission,Si 2$p$ core-levels, x-ray polarization, surface-dosing modification, andtheoretical surface slab calculations are employed to assist identification ofbulk versus surface state character of the $E_\mathrm{F}$-crossing bands andtheir relation to specific U- or Si-terminations of the cleaved surface. Thebulk Fermi surface topology is critically compared to density functional theoryand to dynamical mean field theory calculations. In addition to clarifying someaspects of the previously measured high symmetry $\Gamma$, Z and X points,incommensurate 0.6a* nested Fermi-edge states located along Z-N-Z are found tobe distinctly different from the density functional theory Fermi surfaceprediction. The temperature evolution of these states above $T_{HO}$, combinedwith a more detailed theoretical investigation of this region, suggests a keyrole of the N-point in the hidden order transition.

Global perspectives of the bulk electronic structure of URu$_2$Si$_2$ from angle-resolved photoemission