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Qubit information processors are increasing in footprint but currently relyon e-beam lithography for patterning the required Josephson junctions (JJs).Advanced optical lithography is an alternative patterning method, and we reporton the development of transmon qubits patterned solely with opticallithography. The lithography uses 193 nm wavelength exposure and 300-mm largesilicon wafers. Qubits and arrays of evaluation JJs were patterned with processcontrol which resulted in narrow feature distributions: a standard deviation of0:78% for a 220 nm linewidth pattern realized across over half the width of thewafers. Room temperature evaluation found a 2.8-3.6% standard deviation in JJresistance in completed chips. The qubits used aluminum and titanium nitridefilms on silicon substrates without substantial silicon etching. T1 times ofthe qubits were extracted at 26 - 27 microseconds, indicating a low level ofmaterial-based qubit defects. This study shows that large wafer opticallithography on silicon is adequate for high-quality transmon qubits, and showsa promising path for improving many-qubit processors.

Development of transmon qubits solely from optical lithography on 300mm wafers