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We have demonstrated a simple and accurate method for characterizing thecapacitance of Graphene/n-Si Schottky junction solar cells (GSSCs) which embedthe metal-oxide-semiconductor (MOS) capacitor. We measured two types of GSSCs,one with thermal annealing treatments (w-a) and one without (wo-a). It wasfound that the wo-a GSSC exhibits a two-step feature in the phase versusforward bias voltage relationship, which may be attributed to the presence ofpolymethyl methacrylate residues. By considering the capacitance of the MOScapacitor (Cmos) and its standard deviation, we successfully obtained thecapacitance of the Schottky junction (CSch), and evaluated meaningful built-inpotentials (Schottky barrier heights) which are 0.51V (0.78eV) and 0.47V(0.75eV) for the w-a and wo-a GSSCs, respectively, by the Mott-Schottkyanalysis. We also briefly discuss the relationship between CSch and the Nyquistand Bode plots, finding that the RC time constant decreases due to thesubtraction of Cmos.

Capacitance characterization of Graphene/n-Si Schottky junction solar cell with MOS capacitor