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The influence of excessive H 2  flow during barrier growth on optical and electrical properties of InGaN light-emitting diodes (LEDs) are investigated in this study. The room temperature photoluminescence of LEDs decays with excessive H 2  treatment. Temperature-dependent photoluminescence (TDPL) reveals an increase of the density and a decrease of the activation energy of deep non-radiative recombination centers in the H 2  treated LEDs. The external quantum efficiency (EQE) of the LEDs suffers from excessive H 2  treatment. The leakage current on the reverse and forward sides of the LEDs are reduced significantly when treated with H 2 , which may be due to the suppressed Poole–Frenkel effect.

The influence of excessive H2 during barrier growth on InGaN light-emitting diodes

The influence of excessive H₂ during barrier growth on InGaN light-emitting diodes