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Here, we report the effect of europium (Eu) doping in Bi2Se3 topologicalinsulator (TI) by using different characterization techniques viz. X-raydiffraction (XRD), scanning electron microscopy (SEM) coupled with energydispersive X-ray analysis (EDXA) and magneto-transport measurements.Temperature dependent electrical resistivity curves revealed a metallicbehaviour both in the presence and absence of applied magnetic field.Magneto-transport measurements showed a decrease in the magneto-resistance (MR)value of the Eu0.1Bi1.9Se3 sample (32% at 5K) in comparison to the pure Bi2Se3sample (80% at 5K). For, Eu0.1Bi1.9Se3 sample, a complex crossover between WLand WAL phenomenon was observed at lower applied magnetic fields, whereas thesame was absent in case of the pristine one. Further, HLN (Hikami LarkinNagaoka) fitted magneto-conductivity (MC) analysis revealed a competing weakanti localization (WAL) and weak localization (WL) behaviour. Summarily, in thepresent work we study the structural, surface morphology and magneto-transportproperties of as grown Eu0.1Bi1.9Se3 single crystals.

Structural, Surface Morphology and Magneto-Transport properties of Self Flux Grown Eu Doped Bi2Se3 Single Crystal