z-logo
open-access-imgOpen Access
First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection
Author(s) -
Thi Thu Thuy Nguyen,
Maxime Legallais,
Fanny Morisot,
Thibauld Cazimajou,
Valérie Stambouli,
Mireille Mouis,
B. Salem,
Céline Ter
Publication year - 2018
Publication title -
materials research express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.383
H-Index - 35
ISSN - 2053-1591
DOI - 10.1088/2053-1591/aae0d5
Subject(s) - nanowire , transistor , microelectronics , materials science , field effect transistor , optoelectronics , nanotechnology , dna , silicon , chemistry , physics , voltage , biochemistry , quantum mechanics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom