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We have performed density functional calculations on the group II-IV nitrideMgSiN$_{2}$. At a pressure of about 20~GPa the ground state wurtzite derivedMgSiN$_{2}$ structure (LP-MgSiN$_{2}$) transforms into a rock-salt derivedstructure (HP-MgSiN$_{2}$) in agreement with previous theoretical andexperimental studies. Both phases are wide band gap semiconductors withindirect band gaps at equilibrium of 5.58 eV (LP-MgSiN$_{2}$) and 5.87 eV(HP-MgSiN$_{2}$), respectively. As the pressure increases, the band gaps becomelarger for both phases, however, the band gap in LP-MgSiN$_{2}$ increasesfaster than the gap in HP-MgSiN$_{2}$ and with a high enough pressure the bandgap in LP-MgSiN$_{2}$ becomes larger than the band gap in HP-MgSiN$_{2}$.

Electronic structure of the high and low pressure polymorphs of MgSiN$_{2}$