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The electronic functionality of thin films is governed by their interfaces.This is very important for the ferroelectric (FE) state which depends onthin-film clamping and interfacial charge transfer. Here we show that in aheterostructure consisting of a nano-granular metal and an organic FE layer of[tetrathiafulvalene]$^{+\delta}$[p-chloranil]$^{-\delta}$ the nano-granularlayer's conductance provides a sensitive and non-invasive probe of thetemperature-dependent dielectric properties of the FE layer. We provide atheoretical framework that is able to qualitatively reproduce the observedconductance changes taking the anisotropy of the dielectric anomaly at theparaelectric(PE)-FE phase transition into account. The approach is alsosuitable for observing dynamical effects close to the phase transition. Focusedelectron beam induced deposition as fabrication method for the nano-granularmetal guarantees excellent down-scaling capabilities, so that monitoring the FEstate on the lateral scale down to 20--30\,nm can be envisioned.

Probing near-interface ferroelectricity by conductance modulation of a nano-granular metal