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A mismatch of atomic registries between single-layer transition metaldichalcogenides (TMDs) in a two dimensional van der Waals heterostructureproduces a moir\'e superlattice with a periodic potential, which can befine-tuned by introducing a twist angle between the materials. This approach ispromising both for controlling the interactions between the TMDs and forengineering their electronic band structures, yet direct observation of thechanges to the electronic structure introduced with varying twist angle has sofar been missing. Here, we probe heterobilayers comprised of single-layerMoS$_2$ and WS$_2$ with twist angles of $(2.0 \pm 0.5)^{\circ}$, $(13.0 \pm0.5)^{\circ}$, and $(20.0 \pm 0.5)^{\circ}$ and investigate the differences intheir electronic band structure using micro-focused angle-resolvedphotoemission spectroscopy. We find strong interlayer hybridization betweenMoS$_2$ and WS$_2$ electronic states at the $\bar{\mathrm{\Gamma}}$-point ofthe Brillouin zone, leading to a transition from a direct bandgap in thesingle-layer to an indirect gap in the heterostructure. Replicas of thehybridized states are observed at the centre of twist angle-dependent moir\'emini Brillouin zones. We confirm that these replica features arise from theinherent moir\'e potential by comparing our experimental observations withdensity functional theory calculations of the superlattice dispersion. Ourdirect visualization of these features underscores the potential of usingtwisted heterobilayer semiconductors to engineer hybrid electronic states andsuperlattices that alter the electronic and optical properties of 2Dheterostructures.

Visualizing band structure hybridization and superlattice effects in twisted MoS$_2$/WS$_2$ heterobilayers