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Monolayers of transition metal dichalcogenides (TMdC) are promisingcandidates for realization of a new generation of optoelectronic devices. Theoptical properties of these two-dimensional materials, however, vary from flaketo flake, or even across individual flakes, and change over time, all of whichmakes control of the optoelectronic properties challenging. There are manydifferent perturbations that can alter the optical properties, including chargedoping, defects, strain, oxidation, and water intercalation. Identifying whichperturbations are present is usually not straightforward and requires multiplemeasurements using multiple experimental modalities, which presents barrierswhen attempting to optimise preparation of these materials. Here, we applyhighresolution photoluminescence and differential reflectance hyperspectralimaging in situ to CVD-grown WS2 monolayers. By combining these two opticalmeasurements and using a statistical correlation analysis we are able todisentangle three contributions modulating optoelectronic properties of thesematerials: electron doping, strain and defects. In separating thesecontributions, we also observe that the B-exciton energy is less sensitive tovariations in doping density than A-excitons.

Disentangling the effects of doping, strain and defects in monolayer WS2 by optical spectroscopy