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Two-dimensional (2D) layered materials-based field-effect transistors (FETs)are promising for ultimate scaled electron device applications because of theimproved electrostatics to atomically thin body thickness. However, comparedwith the typical thickness of ~5-nm for Si-on-insulator (SOI), the advantage ofthe ultimate thickness limit of monolayer for the device performance has notbeen fully proved yet, especially for the on-state at the accumulation region.Here, we present much stronger quantum-mechanical effect at the accumulationregion based on the C-V analysis for top-gate MoS2 FETs. The self-consistentcalculation elucidated that the electrons are confined in the monolayerthickness, unlike in the triangle potential formed by the electric field forSOI, the gate-channel capacitance is ideally maximized to the gate insulatorcapacitance since the capacitive contribution of the channel can be neglecteddue to the negligible channel thickness. This quantum-mechanical effect agreedwell with the experimental results. Therefore, monolayer 2D channels aresuggested to be used to enhance the on-current as well as the gate modulationability.

Quantum-mechanical effect in atomically thin MoS2 FET