English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Although many possible two-dimensional (2D) topological insulators (TIs) havebeen predicted in recent years, there is still lack of experimentallyrealizable 2D TI. Through first-principles and tight-binding simulations, wefound an effective way to stabilize the robust quantum spin Hall state with alarge nontrivial gap of 227 meV in 2D honeycomb HgTe monolayer by theAl$_2$O$_3$(0001) substrate. The band topology originates from the bandinversion between the $s-$like and $p-$like orbitals that are contributedcompletely by the Hg and Te atoms, so the quantized edge states are restrictedwithin the honeycomb HgTe monolayer. Meanwhile, the strong interaction betweenHgTe and Al$_2$O$_3$(0001) ensures high stability of the atomic structure.Therefore, the TI states may be realized in HgTe/Al$_2$O$_3$(0001) at hightemperature.

Realizing robust large-gap quantum spin Hall state in 2D HgTe monolayer on insulating substrate