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We show the suppression of nucleation density in chemical vapor deposited graphene through the use of a sputtered metal coating on the exterior of a copper catalyst enclosure, resulting in the growth of sub-centimeter scale single crystal graphene domains and complete elimination of multilayer growth. The sputtered coating suppresses nucleation density by acting as both a diffusion barrier and as a sink for excess carbon during the growth, reducing the carbon concentration in the interior of the enclosure. Field effect mobility of hBN-templated devices fabricated from graphene domains grown in this way show room temperature carrier mobilities of 12 000 cm2 V−1 s−1 and an absence of weak localization at low temperature. These results indicate a very low concentration of line and point defects in the grown films, which is further supported by Raman and transmission electron microscopic characterization.

Sputtering an exterior metal coating on copper enclosure for large-scale growth of single-crystalline graphene