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Low-dimensional multiferroic materials hold great promises in miniaturizeddevice applications such as nanoscale transducers, actuators, sensors,photovoltaics, and nonvolatile memories. Here, using first-principles theory wepredict that two-dimensional (2D) monolayer Group IV monochalcogenidesincluding GeS, GeSe, SnS, and SnSe are a class of 2D semiconductingmultiferroics with strongly coupled giant in-plane spontaneous ferroelectricpolarization and spontaneous ferroelastic lattice strain that arethermodynamically stable at room temperature and beyond, and can be effectivelymodulated by elastic strain engineering. Their optical absorption spectraexhibit strong in-plane anisotropy with visible-spectrum excitonic gaps andsizable exciton binding energies, rendering the unique characteristics oflow-dimensional semiconductors. More importantly, the predicted low domain wallenergy and small migration barrier together with the coupled multiferroic orderand anisotropic electronic structures suggest their great potentials fortunable multiferroic functional devices by manipulating external electrical,mechanical, and optical field to control the internal responses, and enable thedevelopment of four device concepts including 2D ferroelectric memory, 2Dferroelastic memory, and 2D ferroelastoelectric nonvolatile photonic memory aswell as 2D ferroelectric excitonic photovoltaics.

Two-Dimensional Multiferroics: Ferroelasticity, Ferroelectricity, Domain Wall, and Potential Mechano-Opto-Electronic Applications