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Electrostatic gating offers elegant ways to simultaneously strain and dopeatomically thin membranes. Here, we report on a detailed \textit{in situ} Ramanscattering study on graphene, suspended over a Si/SiO$_2$ substrate. In such alayered structure, the intensity of the Raman G- and 2D-mode features ofgraphene are strongly modulated by optical interference effects and allow anaccurate determination of the electrostatically-induced membrane deflection, upto irreversible collapse. The membrane deflection is successfully described byan electromechanical model, which we also use to provide useful guidelines fordevice engineering. In addition, electrostatically-induced tensile strain isdetermined by examining the softening of the Raman features. Due to a smallresidual charge inhomogeneity $\sim 5\times 10^{10}~\rm cm^{-2}$, we find thatnon-adiabatic anomalous phonon softening is negligible compared tostrain-induced phonon softening. These results open perspectives for innovativeRaman scattering-based readout schemes in two-dimensional nanoreso

Monitoring Electrostatically-Induced Deflection, Strain and Doping in Suspended Graphene using Raman Spectroscopy