English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Channel length scaling in graphene field effect transistors (GFETs) is key inthe pursuit of higher performance in radio frequency electronics for both rigidand flexible substrates. Although two-dimensional (2D) materials provide asuperior immunity to Short Channel Effects (SCEs) than bulk materials, theycould dominate in scaled GFETs. In this work, we have developed a model thatcalculates electron and hole transport along the graphene channel in adrift-diffusion basis, while considering the 2D electrostatics. Our modelobtains the self-consistent solution of the 2D Poisson's equation coupled tothe current continuity equation, the latter embedding an appropriate model fordrift velocity saturation. We have studied the role played by theelectrostatics and the velocity saturation in GFETs with short channel lengthsL. Severe scaling results in a high degradation of GFET output conductance. Theextrinsic cutoff frequency follows a 1/L^n scaling trend, where the index nfulfills n < 2. The case n = 2 corresponds to long-channel GFETs with lowsource/drain series resistance, that is, devices where the channel resistanceis controlling the drain current. For high series resistance, n decreases downto n= 1, and it degrades to values of n < 1 because of the SCEs, especially athigh drain bias. The model predicts high maximum oscillation frequencies above1 THz for channel lengths below 100 nm, but, in order to obtain thesefrequencies, it is very important to minimize the gate series resistance. Themodel shows very good agreement with experimental current voltage curvesobtained from short channel GFETs and also reproduces negative differentialresistance, which is due to a reduction of diffusion current.

Short channel effects in graphene-based field effect transistors targeting radio-frequency applications