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The operation of an integrated two-dimensional complementarymetal-oxide-semiconductor inverter with well-matched input/output voltages isreported. The circuit combines a few-layer MoS2 n-MOSFET and a black phosphorus(BP) p-MOSFET fabricated using a common local backgate electrode with thin (20nm) HfO2 gate dielectric. The constituent devices have linear thresholdvoltages of -0.8 V and +0.8 V and produce peak transconductances of 16 uS/umand 41 uS/um for the MoS2 n-MOSFET and BP p-MOSFET, respectively. The invertershows a voltage gain of 3.5 at a supply voltage, VDD = 2.5 V, and has peakswitching current of 108 uA and off-state current of 8.4 uA (2.4 uA) at VIN = 0(VIN = 2.5 V). In addition, the inverter has voltage gain greater than unityfor VDD > 0.5 V, has open butterfly curves for VDD > 1 V, and achieves staticnoise margin over 500 mV at VDD = 2.5 V. The voltage gain was found to beinsensitive to temperature between 270 K and 340 K, and AC large andsmall-signal operation was demonstrated at frequencies up to 100 kHz. Thedemonstration of a complementary 2D inverter which operates in a symmetricvoltage window suitable for driving a subsequent logic stage is a significantstep forward in developing practical applications for devices based upon 2Dmaterials.

Symmetric Complementary Logic Inverter Using Integrated Black Phosphorus and MoS2 Transistors