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By means of atomistic tight-binding calculations, we investigate the effectsof uniaxial strain on the electronic bandstructure of twisted graphene bilayer.We find that the bandstructure is dramatically deformed and the degeneracy ofthe bands is broken by strain. As a conseqence, the number of Dirac cones candouble and the van Hove singularity points are separated in energy. Thedependence of these effects on the strength of strain, its applied directionand the twist angle is carefully clarified. As an important result, wedemonstrate that the position of van Hove singularities can be modulated bystrain, suggesting the possibility of observing this phenomenon at low energyin a large range of twist angle (i.e., larger than $10^\circ$). Unfortunately,these interesting/important phenomena have not been clarified in the previousworks based on the continuum approximation. While they are in good agreementwith available experiments, our results provide a detailed understanding of thestrain effects on the electronic properties and may motivate otherinvestigations of electronic transport in this type of graphene lattice.

Strain-induced modulation of Dirac cones and van Hove singularities in twisted graphene bilayer