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The nanostructure and switching properties of the Al/SrTiO3-xNy/Al memristors have been investigated. It was found that the formation of stacking faults defects in the perovskite structure during plasma nitridation facilitates resistivity switching in Al/SrTiO3-xNy/Al memristors. From thermal emission measurements we observed local heating of the Al/SrTiO3-xNy anode interface (285oC) during switching when the interface becomes rectified due to the formation of locally undoped region. A model for resistivity switching and parameters affecting the memristor operation is discussed considering the electromigration theory. The I-V curves are analyzed taking into account the tunnel barrier formations and an inhomogeneous Schottky barrier modification at the anode interface.

The effects of switching time and SrTiO3−xNynanostructures on the operation of Al/SrTiO3−xNy/Al memristors

The effects of switching time and SrTiO_3−xN_ynanostructures on the operation of Al/SrTiO_3−xN_y/Al memristors