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InCH4/H2 atmosphere, Nitrogen-doped nanocrystalline diamond films were prepared by direct current hot-cathode plasma chemical vapor deposition (PCVD) method on the conditions of different flow rate of Melamine. While the flow rate of Melamine is 2sccm, the grain refining effect on the diamond films is obvious and the nanocrystalline grains protrude from the basis of the film which shape rough surfaces. The films are incompact, due to its large gaps and holes as well as defects, however the conductivity of these films are increased. The increasing flow rate of Melamine promotes the growth of (111) oriented.

Influences of Melamine Flow Rate on the Growth Behavior of Nanocrystalline Diamond Films by Direct Current Plasma Chemical Vapor Deposition Method