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A Study of thin films preparation faces many challenges due to the environmentally sensitivity that could initiate effect towards device performance. Requirement to fabricate the passive device like capacitor at such nanoscaled thickness is quite challenges that would initiate the effect on the device performance. Nowadays, capacitor not just only existed by conventional dielectric material, it can become a complex device when ferroelectric materials get involved. This material promotes useful knowledge of their polarization behavior which contains switching element that premier contribution for memory storage applications. The present study demonstrates the potential of amorphous PbTiO3 thin films as nanodielectric layer for high performance capacitor at low voltage applications. This unique characteristic of amorphous structure performs such incredible high dielectric constant value about ~100 and tangent loss of 4-5%, measured at 1 kHz. The PbTiO3 films also involve other electrical measurement like P-E hysteresis loop.

The potential role of amorphous lead titanate thin films as nanodielectric layer for capacitor applications