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Near-interfacial oxide traps and chemical impurities on the graphene surfaceor at the graphene-dielectric interface can be a source of intentional orunintentional doping of graphene sheet. The efficiency of such chemical dopingcan vary in a wide range depending on parameters of graphene field effectdevices. Mechanisms of such sensitivity of doping efficiency to the devicecharacteristics need to be understood. The objective of this paper is totheoretically derive the analytical relations, adapted to the explicitcalculation of graphene chemical doping.

Impact of Extrinsic Interface Traps and Doping Atoms on Conductivity of Graphene Field Effect Devices