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A set of CdTe films grown by the CSS method were annealed in aCdCl2 atmosphere of during 5 min at 345, 365, 385, 405, 425, 435, 445 and 455 °C. The films were characterized before and after annealing by the SEM, EDS, X-ray, optical absorption and photoluminescence (PL) techniques. As the annealing temperature is increased a tendency to improve the Cd/Te ratio is observed. After the thermal treatment at 430 °C the films reach the stoichiometry. A deviation from stoichiometry appears again for annealing temperatures higher than 430 °C. The PL spectra of the films at 6.5 K exhibit two emission bands, one corresponds to the defects energy levels band (1.4–1.5 eV) and the other is located in the interval from 1.564 to 1.584 eV (pA). For annealing temperatures higher than 430 °C an increment in the intensity and energy position of pA is observed, while for annealing temperatures less than 430 °C the behavior is irregular. In the emission mechanisms of pA the expected impurities and/or native defects in the material such as the VTe, VCdClTe, CdTe and ClTe are involved.

Effect of the pos-deposition annealing with CdCl2on the optical, structural and morphological properties of CdTe-films grown by CSS

Effect of the pos-deposition annealing with CdCl₂on the optical, structural and morphological properties of CdTe-films grown by CSS