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We report a strong absorption of microwave energy at X-band (8 GHz to 12 GHz) by N-doped graphene. Attachment of nitrogen on the layered structure of GO improves the reflection loss of GO slab (2.0 mm, thickness) from –10 dB to –25.0 dB with a sharp bandwidth ~0.3 GHz. As for the broader bandwidth of about 1.4 GHz, reflection loss is –10.5 dB. This significant absorption may take place by improvement of magnetic property of NG through high magnetic coupling of localized spins induced by a defect on the surface of graphene. N atoms play as the electron trapper, easily influenced by self-magnetic moments and incoming electromagnetic fields to produce electric and/or magnetic losses. Here, urea acts as the reducing agent and N atoms donor for graphene oxide in hydrothermal process at a temperature of 190 °C.

Hydrothermal Synthesis of Reduced Graphene Oxide Using Urea as Reduction Agent: Excellent X-band Electromagnetic Absorption Properties