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We developed new method of stress and measurement current levels to research and modify thin dielectric of MIS structures under high-field injection of electrons. This method allows to take into account processes of MIS structure capacity charging and trapping of charge in gate dielectric of MIS structure when injection mode. It is shown that when a high density of the injection current, a characteristics control of charge, which accumulates in gate dielectric, when realizing the method of stress and measurement current, is necessary to implement by monitoring of voltage change on MIS structure when amplitude of measurement injection current is lower than amplitude of stress current. In order to rise performance of the method and implement a possibility of researching of fast relaxation charges, which is accumulated in gate dielectric during the process of high-field stress influence, we suggest to realize charging and discharging of MIS structure in accelerated regime when higher density of measurement current takes place.

Method of stress and measurement current levels for MIS structures researching and modifying under high-field injection of electrons